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data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 1 general description the as431i is a three-terminal adjustable shunt reg- ulator with guaranteed thermal stability over a full operation range. it features sharp turn-on characteris- tics, low temperature coef ficient and low output impedance, which make it ideal substitute for zener diode in applications such as switching power supply, charger and other adjustable regulators. the output voltage of as431i can be set to any value between v ref (2.5v) and the corresponding maximum cathode voltage (36v). the as431i is offered in two grade initial voltage tolerance at 25 , 0.5%, and 1%. this ic is available in 3 packages: to-92 (bulk or ammo packing), sot-23 and sot-89. features y programmable precise output voltage from 2.5v to 36v y high stability under capacitive load y low minimum cathode current for regulation: 10 a (typ.), 50 a (max.) y low temperature deviation: 4.5mv typical y sink current capacity from 50 a to 100ma y low output noise y wide operating range: -40 to 125 applications y charger y voltage adapter y switching power supply y graphic card y precision voltage reference figure 1. package type of as431i to-92(bulk packing) to-92(ammo packing) sot-89 sot-23
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 2 pin configuration n package p package (sot-23) (sot-89) z package z package (to-92 (bulk package)) (to-92 (ammo package)) figure 2. pin configurat ion of as431i (top view)
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 3 ref v ref cathode anode + - functional block diagram figure 3. functional block diagram of as431i
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 4 ordering information as431i - circuit type g1: green voltage tolerance a: 0.5% tr: tape and reel or ammo b: 1.0% blank: bulk package n: sot-23 r: sot-89 z: to-92 package temperature range voltage tolerance part number marking id packing type 0.5% AS431IANTR-G1 gb9 tape & reel sot-23 -40 to 125 1.0% as431ibntr-g1 gc9 tape & reel 0.5% as431iaz-g1 as431iaz-g1 bulk 0.5% as431iaztr-g1 as431iaz-g1 ammo 1.0% as431ibz-g1 as431ibz-g1 bulk to-92 -40 to 125 1.0% as431ibztr-g1 as431ibz-g1 ammo 0.5% as431iartr-g1 g43j tape & reel sot-89 -40 to 125 1.0% as431ibrtr-g1 g43k tape & reel bcd semiconductor's products, as designated with "g1" suffix in the part number, are rohs compliant and green.
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 5 absolute maximum ratings (note 1) parameter symbol value unit cathode voltage v ka 40 v cathode current range (continuous) i ka -100 to 150 ma reference input current range i ref 10 ma to-92 770 sot-89 770 power dissipation p d sot-23 370 mw junction temperature t j 150 c storage temperature range t stg -65 to 150 c esd (human body model) esd 2000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating conditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit cathode voltage v ka v ref 36 v cathode current i ka 0.05 100 ma operating ambient temperature range t a -40 125 c
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 6 electrical characteristics operating conditions: t a =25 , unless otherwise specified. parameter test circuit symbol conditions min typ max unit 0.5% 2.487 2.500 2.512 reference voltage 1.0% 4 v ref v ka =v ref, i ka =10ma 2.475 2.500 2.525 v 0 to 70 o c 4.5 8 -40 to 85 o c 4.5 10 deviation of reference voltage over full temperature range 4 ? v ref v ka =v ref i ka = 10ma -40 to 125 o c 4.5 16 mv ? v ka = 10v to v ref -1.0 -2.7 ratio of change in reference voltage to the change in cathode voltage 5 ? v ref ? v ka i ka =10ma ? v ka = 36v to 10v -0.5 -2.0 mv/v reference current 5 i ref i ka =10ma,r1=10k ? , r2= 0.035 0.5 a deviation of reference current over full temperature range 5 ? i ref i ka =10ma, r1=10k ?, r2= , t a =-40 to 125 o c 0.03 0.3 a minimum cathode current for regulation 4 i ka (min) v ka =v ref 10 50 a off-state cathode current 6 i ka (off) v ka =36v, v ref =0 0.05 1.0 a dynamic impedance 4 z ka v ka =v ref , i ka =1 to 100ma, f 1.0khz 0.15 0.5 ? to-92 68 sot-89 70 thermal resistance jc sot-23 113 c /w
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 7 electrical characteristics (continued) v in v ka r1 i ka v ref figure 4. test circuit 4 for v ka =v ref v in v ka i ka r1 r2 v ref v ka =v ref (1+r1/r2)+ i ref *r1 i ref r3 figure 5. test circuit 5 for v ka v ref figure 6. test circuit 6 for i off
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 8 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -40 -30 -20 -10 0 10 20 30 40 50 cathode current ( a) cathode voltage (v) v ka =v ref t a =25 o c typical performance characteristics figure 7. reference voltage vs. ambient temperature figure 8. refer ence current vs. am bient temperature figure 9. cathode current vs. cathode voltage figure 10. cathode current vs. cathode voltage -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -120 -100 -80 -60 -40 -20 0 20 40 60 80 100 120 cathode current (ma) cathode voltage (v) v ka =v ref t a =25 o c -60 -40 -20 0 20 40 60 80 100 120 140 2.48 2.49 2.50 2.51 2.52 reference voltage (v) temperature ( 0 c) v ka =v ref i ka =10ma -40 -20 0 20 40 60 80 100 120 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.055 reference current ( a) temperature ( o c) r1=10k, r2=infinite i ka =10ma
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 9 10 f 8.2k 15k i ka output 242 gnd typical performance characteristics (continued) figure 11. off-state cathode current vs. figure 12. ratio of delt a reference voltage to the ambient temperature ratio of delta cathode voltage figure 13. small signal voltage gain vs. frequency -60 -40 -20 0 20 40 60 80 100 120 140 -0.6 -0.4 -0.2 0.0 0.2 0.4 ? v ref / ? v ka (mv/v) temperature ( 0 c) v ka =3.5v to 36v -60 -40 -20 0 20 40 60 80 100 120 140 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 off-state cathode current ( a) temperature ( 0 c) v ka =36v v ref =0 1k 10k 100k -30 -20 -10 0 10 20 30 40 50 60 small signal voltage gain (db) frequence (hz) i ka =10ma t a =25 o c 300k
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 10 typical performance characteristics (continued) i ka r1 (10k) r2 150 figure 14. stability boundary conditions vs. load capacitance figure 15. pulse response of input and output voltage pulse generator f=100khz 220 50 output gnd 0 10 20 30 40 50 60 70 80 90 100 stable 10 1 0.1 0.01 cathode current (ma) load capacitor ( f) v ka =v ref v ka =5v v ka =10v v ka >10v, no oscillation 0.001 stable
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 11 typical application figure 16. shunt regulator figure 17. high current shunt regulator figure 18. current source or current limit v out =(1+r1/r2)*v ref v out =(1+r2/r3)*v ref i out =v ref /r2+i ka
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 12 typical application (continued) figure 19. precision 5v 1a regulator figure 20. pwm converter with reference
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 13 mechanical dimensions to-92(bulk packing) unit: mm(inch) 2.420(0. 095) 2.660(0.105) 0.360(0. 014) 0.760(0. 030) 1. 600(0. 063) max 1.270(0. 050) typ 1.000(0. 039) 1.400(0. 055) 4.400(0. 173) 4.800(0. 189) 3.430(0. 135) min 0.320(0. 013) 0.510(0. 020) 0. 0 0 0( 0. 0 0 0) 0. 3 8 0( 0. 0 1 5)
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 14 mechanical dimensions (continued) to-92(ammo packing) unit: mm(inch) 2.540(0.100 ) ty p 1.270(0. 050 ) typ 0. (0.015) 0. 550 (0.022 ) 4. 400(0. 173 ) 4. 800 ( 0. 189 ) 3. 430(0. 135 ) min 0. 320(0. 013 ) 0 . 510 ( 0. 020 ) 0.000(0.000 ) 0.380(0.015 ) max 1. 100(0. 043 1. 400(0. 055 ) 1. 600(0. 063) ) 380 2.500(0. 098 ) 4. 000 ( 0. 157 ) 13.000(0. 512 ) 15.000 ( 0.591 )
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 15 mechanical dimensions (continued) sot-23 unit: mm(inch) 2.300(0.091) 2.500(0.098) 1.200(0.047) 1.400(0.055) 0.920(0.036) 0.980(0.039) 0.390(0.015) 0.450(0.018) 1.900(0.075)ref 2.800(0.110) 3.000(0.118) 2.0 3.0 0.500(0.020) 0.700(0.028) 1.050(0.041)ref 0.020(0.001) 0.100(0.004) 0.900(0.035) 1.100(0.043) 4 r0.100(0.004) 7.0 7.0 0.550(0.022)ref 0.200(0.008)min 0.100(0.004) gauge plane 0.080(0.003) 0.150(0.006) r0.100(0.004) 0.0 ~ 10.0
data sheet low cathode current adjustable precis ion shunt regulator as431i aug. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 16 45 1.030(0.041)ref 1.550(0.061)ref 4.400(0.173) 4.600(0.181) 0.900(0.035) 1.100(0.043) 3.950(0.156) 4.250(0.167) 3.000(0.118) typ 0.480(0.019) 2.300(0.091) 2.600(0.102) 0.320(0.013) 0.520(0.020) 3 10 2.060(0.081)ref 1.400(0.055) 1.600(0.063) 0.350(0.014) 0.450(0.018) r0.150(0.006) 3 10 1.500(0.059) 0.320(0.013)ref 1.620(0.064)ref 2.210(0.087)ref 0.320(0.013) 0.520(0.020) 1.800(0.071) mechanical dimensions (continued) sot-89 unit: mm(inch)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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